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High Voltage
IXTK 21N100
V DSS
= 1000 V
I D25
MegaMOS TM FETs
IXTN 21N100
= 21 A
R DS(on) = 0.55 ?
N-Channel, Enhancement Mode
TO-264 AA (IXTK)
Symbol
Test Conditions
Maximum Ratings
IXTK IXTN
V DSS
T J = 25 ° C to 150 ° C
1000
1000
V
G
V DGR
T J = 25 ° C to 150 ° C; R GS = 1 M ?
1000
1000
V
D
S
D (TAB)
V GS
V GSM
I D25
I DM
P D
Continuous
Transient
T C = 25 ° C, Chip capability
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
± 20
± 30
21
84
500
± 20
± 30
21
84
520
V
V
A
A
W
miniBLOC, SOT-227 B
E153432
D G
G
S
T J
T JM
T stg
-55 ... +150
150
-55 ... +150
° C
° C
° C
S
G = Gate
S
D = Drain
D
S
T L
1.6 mm (0.063 in) from case for 10 s
300
-
° C
S = Source TAB = Drain
Either Source terminal at miniBLOC can be used
V ISOL
50/60 Hz, RMS
I ISOL ≤ 1 mA
t = 1 min
t=1s
-
-
2500
3000
V~
V~
as Main or Kelvin Source
M d
Mounting torque
Terminal connection torque
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Features
Weight
10
30
g
International standard packages
JEDEC TO-264, epoxy meet UL 94 V-0
flammability classification
miniBLOC, (ISOTOP-compatible) with
Aluminium nitride isolation
Low R DS (on) HDMOS TM process
Rugged polysilicon gate cell structure
Low package inductance
Applications
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
min. typ. max.
DC-DC converters
Synchronous rectification
Battery chargers
V DSS
V GH(th)
I GSS
I DSS
V GS = 0 V, I D = 6 mA
V DS = V GS , I D = 500 μ A
V GS = ± 20 V DC , V DS = 0
V DS = 0.8 ? V DSS
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
1000
2
4.5
± 200
500
2
V
V
nA
μ A
mA
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Advantages
R DS(on)
V GS = 10 V, I D = 0.5 ? I D25
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
0.55
?
Easy to mount
Space savings
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
? 2000 IXYS All rights reserved
92808I(5/97)
1-4
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